Quantum dot laser & Epitaxial wafer
1240nm - 1330nm
We provide customized quantum dot lasers with excellent reliability at high temperatures and high optical feedback tolerance, ideal light sources for optical communications and silicon photonics, as well as epitaxial wafers, gain chips, TO-CAN packages, etc. according to customer requirements. We offer full support from prototyping to mass production. Please feel free to contact us with your desired specifications using the Contact form at the bottom of the page.
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Wavelength
1240nm - 1330nm
Type
・Epitaxial wafer
・FP-LD
・DFB-LD
・Gain chip
(Please contact us for details.)
Foundry
service
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[Epitaxy]
(Delivery form: Epitaxial wafer)
High quality epitaxy on 3 inch or 4 inch GaAs substrates.
The available layers are as follows.
・InAs quantum dot
・InGaAs quantum well
・GaAs
・AlGaAs
[1st epi, grating formation, regrowth]
(Delivery form: Epitaxial wafer with grating)
Epitaxy on active layer, grating formation and regrowth.
[Wafer process]
(Delivery form: Wafer after wafer process)
Epitaxy, CAD, photo mask and wafer process.
[Bar cleaving or Chip fabrication]
(Delivery form: Bar or Chip)
Epitaxy, wafer process, bar cleaving, facet coating and chipping.
[TO-CAN packaging]
(Delivery form: 5.6mm TO-CAN package)
Epitaxy, wafer process, chipping and packaging into a 5.6mm TO-CAN.
Application
Light source for optical communication
Light source for silicon photonics (intra-data center communication, high performance computer, LiDAR, intra-vehicle communication, mobile infrastructure)
Underground resources exploration (175-200degC)